cystech electronics corp. spec. no. : c 915c 3 issued date : 20 14 . 08 . 22 revised date : page no. : 1 / 8 mta340 n 02kc 3 cyste k product specification 2 0v n - channel enhancement mode mosfet mta340n02kc 3 features ? simple drive requirement ? small package outline ? pb - free lead plating and halogen - free package symbol outline ordering information device package shipping mta340n02kc3 - 0 - t1 - g sot - 523 ( pb - free lead plating package ) 3000 pcs / tape & reel mta340n02kc 3 sot - 523 g gate s sour c e d drain g s d bv dss 20v i d @v gs =4.5v 700ma r dson @v gs =4.5v, i d =650ma 299m (typ) r dson @v gs =2.5v,i d =500ma 550m (typ) r dson @v gs =1.8v,i d =200ma 1.05 (typ) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pcs / tape & reel, 7 reel pr oduct rank, zero for no rank products product name
cystech electronics corp. spec. no. : c 915c 3 issued date : 20 14 . 08 . 22 revised date : page no. : 2 / 8 mta340 n 02kc 3 cyste k product specification absolute maximum ratings (ta=25 ? c) parameter symbol limits unit drain - sour c e voltage v ds 2 0 v gate - source voltage v gs 12 continuous drain current @ t a =25 ? c , v gs =4.5v i d 700 (note 3) m a continuous drain current @ t a =70 ? c , v gs =4.5v 560 (note 3) pulsed drain current (notes 1, 2) i dm 2.8 a power dissipation p d 280 (note 3) mw esd susceptibility v esd 1400 (note 4) v operating junction and storage temperature tj , tstg - 55~+150 ? c thermal performance parameter symbol limit unit thermal resistance, junction - to - ambient, max (note 3) rth,ja 450 ? c /w note : 1. pulse width limited by maximum junction temperature. 2. pulse width 300 s, duty cycle 2%. 3. surface mounted on 1 in 2 copper pad of fr - 4 board . 4. human body model, 1.5k in series with 100pf. electrical characteristics (t j =25 ? symbol min. typ. max. unit test conditions static bv dss 2 0 - - v v gs =0v, i d = 25 0 a v gs(th) 0.45 0.66 1.0 v v ds =v gs , i d = 25 0 a i gss - - 10 a v gs = 12 v , v ds =0v i dss - - 1 v ds =16v, v gs =0v - - 10 v ds =16v, v gs =0v (tj=70 ? c ) * r ds(on) - 299 390 m ? v gs =4.5v, i d = 650m a - 550 705 v gs =2.5v, i d = 500m a - 1.05 2.1 v gs =1.8v, i d = 200m a * g fs - 870 - ms v ds = 10 v , i d =400ma dynamic ciss - 35 - pf v ds =15v, v gs =0, f=1mhz coss - 11 - crss - 9 - t d(on) - 7 - ns v d s = 15 v, i d = 500m a, v g s = 4.5 v , r g = 6 t r - 21 - t d(off) - 25 - t f - 47 - qg - 1 - nc v ds = 15 v, i d = 500m a, v gs =4.5v qgs - 0. 05 - qgd - 0.4 - source - drain diode * v sd - 0.78 1. 0 v v gs =0v, i s = 150m a *pulse test : pulse width ? 300s, duty cycle ? 2%
cystech electronics corp. spec. no. : c 915c 3 issued date : 20 14 . 08 . 22 revised date : page no. : 3 / 8 mta340 n 02kc 3 cyste k product specification typical characteristics typical output characteristics 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 0.5 1 1.5 2 v ds , drain-source voltage(v) i d , drain current (a) v gs =2.5v v gs =1.5v v gs =2v v gs =3v v gs =5v v gs =4.5v v gs =3.5v v gs =4v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0.001 0.01 0.1 1 10 i d , drain current(a) r ds( o n ) , static drain-source on-state resistance(m) v gs =1.8v v gs =1.5v v gs =4.5v v gs =2.5v reverse drain current vs source-drain voltage 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 i dr , reverse drain current (a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 4 5 6 7 8 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =650ma drain-source on-state resistance vs junction tempearture 0.6 0.8 1 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4.5v, i d =650ma r ds(on) @tj=25c : 299m typ.
cystech electronics corp. spec. no. : c 915c 3 issued date : 20 14 . 08 . 22 revised date : page no. : 4 / 8 mta340 n 02kc 3 cyste k product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a single pulse power rating, junction to ambient (note on page 2) 0 1 2 3 4 5 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =450c/w forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10v maximum safe operating area 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c, v gs =4.5v, r ja =450c/w single pulse r ds(on) limited maximum drain current vs junctiontemperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maxim um drain current(a) t a =25c, v gs =4.5v, r ja =450c/w
cystech electronics corp. spec. no. : c 915c 3 issued date : 20 14 . 08 . 22 revised date : page no. : 5 / 8 mta340 n 02kc 3 cyste k product specification typical characteristics(cont.) gate charge characteristics 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =15v i d =500ma typical transfer characteristics 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 1 2 3 4 v gs , gate-source voltage(v) i d , drain current (a) v ds =3v t a =25c transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =450 c/w
cystech electronics corp. spec. no. : c 915c 3 issued date : 20 14 . 08 . 22 revised date : page no. : 6 / 8 mta340 n 02kc 3 cyste k product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c 915c 3 issued date : 20 14 . 08 . 22 revised date : page no. : 7 / 8 mta340 n 02kc 3 cyste k product specification recommended wave solde ring condition product peak temperature soldering time pb - free devices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temperature profile for ir reflow profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c /secon d max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seconds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of th e package, measured on the package body surface.
cystech electronics corp. spec. no. : c 915c 3 issued date : 20 14 . 08 . 22 revised date : page no. : 8 / 8 mta340 n 02kc 3 cyste k product specification sot - 523 dimension *: typical dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0.0079 0.0157 0.20 0.40 i *0.0197 - * 0.50 - b 0.0591 0.0669 1.50 1.70 j 0.0 610 0.0650 1.55 1.65 c 0.0118 0.0197 0.30 0.50 k 0.0276 0.0315 0.70 0.80 d 0.0295 0.0335 0.75 0.85 l 0.0224 0.0248 0.57 0.63 e 0.0118 0.0197 0.30 0.50 m 0.0020 0.0059 0.05 0.15 f 0.0039 0.0118 0.10 0.30 n 0.0039 0.0118 0.10 0.30 g 0.0039 0.0118 0.10 0 .30 o 0 0.0031 0 0.08 h *0.0197 - * 0.5 0 - notes: 1. controlling dimension: millimeters. 2 . maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with pac king specification or packing method, please contact your local cyste k sales office. material: ? ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 important notice: ? all rights are reserved. reproduc tion in whole or in part is prohibited without the prior written approval of cyste k . ? cyste k reserves the right to make changes to its products without notice. ? cyste k semiconductor products are not warranted to be suitable for use in life - support applic ations, or systems. ? cyste k assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. marking: style: pin 1. gate 2. source 3. drain 3 - lead sot - 5 23 plastic surface mounted package cystek package code: c3 n3 xx device code date code n h f 1 2 3 j a b c d e g i k l m o
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